Texas Instruments CSD87330Q3DT

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

NexFET™

Package/Case:

8-PowerLDFN

Packaging:

Bulk

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

20A (Ta)

Rds On (Max) @ Id, Vgs:

9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V

Vgs(th) (Max) @ Id:

2.1V @ 250µA, 1.15V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

5.8nC @ 4.5V, 11.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

900pF @ 15V, 1632pF @ 15V

Power - Max:

6W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-LSON (3.3x3.3)