Texas Instruments CSD86356Q5DT

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

NexFET™

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

Logic Level Gate, 5V Drive

Drain to Source Voltage (Vdss):

25V

Current - Continuous Drain (Id) @ 25°C:

40A (Ta)

Rds On (Max) @ Id, Vgs:

4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V

Vgs(th) (Max) @ Id:

1.85V @ 250µA, 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.9nC @ 4.5V, 19.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

1040pF @ 12.5V, 2510pF @ 12.5V

Power - Max:

12W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-VSON-CLIP (5x6)