Texas Instruments CSD85312Q3E

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

NexFET™

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual) Common Source

FET Feature:

Logic Level Gate, 5V Drive

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

39A

Rds On (Max) @ Id, Vgs:

12.4mOhm @ 10A, 8V

Vgs(th) (Max) @ Id:

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

15.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

2390pF @ 10V

Power - Max:

2.5W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-VSON (3.3x3.3)