Texas Instruments CSD16323Q3T

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

NexFET™

Package/Case:

8-PowerTDFN

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

25 V

Current - Continuous Drain (Id) @ 25°C:

20A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

3V, 8V

Rds On (Max) @ Id, Vgs:

4.5mOhm @ 24A, 8V

Vgs(th) (Max) @ Id:

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8.4 nC @ 4.5 V

Vgs (Max):

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds:

1300 pF @ 12.5 V

FET Feature:

-

Power Dissipation (Max):

2.8W (Ta), 74W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-VSON-CLIP (3.3x3.3)