Infineon Technologies BSZ15DC02KDHXTMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel Complementary

FET Feature:

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

5.1A, 3.2A

Rds On (Max) @ Id, Vgs:

55mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:

1.4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:

2.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

419pF @ 10V

Power - Max:

2.5W

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TSDSON-8-FL