Infineon Technologies BSO615CGXUMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

SIPMOS®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

3.1A (Ta), 2A (Ta)

Rds On (Max) @ Id, Vgs:

110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:

2V @ 20µA, 2V @ 450µA

Gate Charge (Qg) (Max) @ Vgs:

22.5nC @ 10V, 20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

380pF @ 25V, 460pF @ 25V

Power - Max:

2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-DSO-8