Infineon Technologies BSC112N06LDATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™ T2

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

20A (Tc)

Rds On (Max) @ Id, Vgs:

11.2mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 28µA

Gate Charge (Qg) (Max) @ Vgs:

55nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

4020pF @ 30V

Power - Max:

65W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8-4