Infineon Technologies BSC0910NDIATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual) Asymmetrical

FET Feature:

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):

25V

Current - Continuous Drain (Id) @ 25°C:

11A, 31A

Rds On (Max) @ Id, Vgs:

4.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

6.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

4500pF @ 12V

Power - Max:

1W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TISON-8