Infineon Technologies BSB044N08NN3GXUMA2

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™ 3

Package/Case:

DirectFET™ Isometric ST

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

18A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

4.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

3.5V @ 97µA

Gate Charge (Qg) (Max) @ Vgs:

73 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5700 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

2.2W (Ta), 78W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

MG-WDSON-2