onsemi BS108G

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

TO-226-3, TO-92-3 Long Body

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

250mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2V, 2.8V

Rds On (Max) @ Id, Vgs:

8Ohm @ 100mA, 2.8V

Vgs(th) (Max) @ Id:

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

150 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

350mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-92 (TO-226)