Infineon Technologies AIMBG120R030M1XTMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V, 20V

Rds On (Max) @ Id, Vgs:

38mOhm @ 27A, 20V

Vgs(th) (Max) @ Id:

5.1V @ 8.6mA

Gate Charge (Qg) (Max) @ Vgs:

57 nC @ 20 V

Vgs (Max):

+23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

1738 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

333W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-12