onsemi 2SJ661-1E

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:

Tube

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

38A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4V, 10V

Rds On (Max) @ Id, Vgs:

39mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

80 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4360 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

1.65W (Ta), 65W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-262-3