Microsemi Corporation APTM10DHM09T3G

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

POWER MOS V®

Package/Case:

SP3

Packaging:

Bulk

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual) Asymmetrical

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

139A

Rds On (Max) @ Id, Vgs:

10mOhm @ 69.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:

350nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

9875pF @ 25V

Power - Max:

390W

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

SP3